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Selective HSG, PH3-Anneal, Doped/Undoped-Poly-Si, Doped/Undoped-SiGe-Poly, Si3N4, (New film processes are under development.)
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- Substantially reduced thermal budget comparing to conventional vertical batch systems
- Reduced cycle time
- Supports formation of Hi-k dielectric films for DRAM capacitor and logic gate dielectric
- Integrated processing for gates stack and DRAM capacitor formation
- Excellent yield and film thickness uniformity by optimized process conditions and clean air flow in loading area of the system.
- Native oxide free process by oxygen and moisture free load lock.
- Improved throughput with dual wafer processing.
- Maximum system uptime by self-cleaning capability.
- Simple structure for easy maintenance (a reactor chamber can be easily and safely inserted and extracted)
- SEMI standard compliant wafer I/O stage
- Supports FOUP type cassettes
- User friendly GUI tube controller (CX3000 series) which supports process logging data analysis capability.
- SECS/GEM compatibility for factory automation.
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