Hitachi kokusai Electric Inc.:200mm Load Lock Vertical Diffusion/LPCVD Systems

VERTRON-V(SS) DD-855V/DJ-855V

VERTRON-V(S2) DD-835V/DJ-853V

As semiconductor devices becomes more highly integrated and miniaturized, it is necessary to control native oxide film growth on the wafer surface at the time of loading for applications such as formation of contact Poly-Si, capacitor nitride, ultra thin oxidation and selective oxidation, etc.
Hitachi Kokusai Electric recommends Load Lock vertical Diffusion/LPCVD Systems, Vertron-V, for these processes to utilize the unique oxygen free load lock chamber mounted directly underneath reactor tube.

Phot(200mm Load Lock Vertical Diffusion/LPCVD Systems)

Specifications

	VERTRON-V(SS)	VERTRON-V(S2)
Wafer Diameter(mm)	200	200
Wafer Batch Size	150	150
Standard Mechanical Interface (SMIF)	NO	YES
Number of Cassette Racks	18	18
Number of Cassette I/O	2	2
Tube Controller	CX-3000(Color TFT)	CX-3000(Color TFT)
Dimensions(W×D×H)(mm)	900×2080×3250	1000×2430×3250

Process Applications

Dry-Ox, Wet-Ox, NO(N2O)-Anneal, Selective-Ox, N2(Ar, H2)-Anneal, PH3-Anneal, Doped/Undoped-Poly-Si, Doped/Undoped-SiGe Poly, Si3N4, TEOS, HTO

Main Features

Native oxide free process by oxygen and moisture free load lock chamber mounted directly underneath reactor tube.
- Greatly reduced contact resistance and effective thickness of capacitor
- Reduced oxygen concentration level in Poly Si film which leads lower resistance after doping
- Capability of control native oxide film growth by controlling oxygen concentration in a load lock chamber
Supports oxygen sensitive processes such as Selective Oxidation for Poly-Meal gate, SiGe Epi base formation and Cu/Low-k annealing process.
High throughput by providing large batch size
Maximum system uptime by self-cleaning capability.
High throughput by optional fast ramp heater element while maintaining low thermal budget.
Excellent yield and film thickness uniformity by optimized process conditions and clean air flow in loading area of the system.
Easy maintenance by heater element moving mechanism.
Minimum overhead time by reliable and speedy wafer handling mechanisms. Wafer handling robot can transfers 5 wafers simultaneously.
High speed, reliable and low vibration cassette loading mechanisms.
Automatic filler dummy wafer supply by wafer detection mechanism.
SEMI standard compliant wafer I/O stage
Supports SMIF interface
Effective space utilization of side-by side layout by side access free design
User friendly GUI tube controller (CX3000 series) which supports process logging data analysis capability.
SECS/GEM compatibility for factory automation.

Typical Process Performance

Film Type		Poly	D-Poly	Thin-SiN	TEOS	HTO	Dry-Ox	Thin-Pyro
Film Thickness(nm)		100	100	5	100	100	10	3
P-Concentration(cm^-3)		-	4E20	-	-	-	-	-
Deposition Rate(nm/min)		> 7	> 1.5	> 0.2	> 4	> 1.5	-	-
Uniformity of Film Thickness	Within Wafer	<2%	<2%	<2%	<3%	<3%	<1.5%	<2%
	Wafer to Wafer	<2%	<2%	<2%	<2%	<2.5%	<1.5%	<1.5%
	Batch to Batch	<1%	<1%	<1%	<1%	<1%	<1%	<1%
Particles/8"Wafer(>0.2m)		< 30	< 30	< 30	< 30	< 30	< 10	< 10
Metal Contamination(cm^-3)		< 1 × 10¹⁰

Note : For film types not described above, please contact us.

* VERTRON is a registered trademark of Hitachi Kokusai Electric Inc.