DC-7000/DC-9000 Series   The DC-7000 and DC-9000 series have been designed for the production of silicon epitaxial wafers, bipolar, BiCMOS, and CMOS processes. Epitaxy offers our customers a costeffective option compared to standard polished wafers as have adverse effects on highly integrated MOS devices. To meet this growing need, Hitachi Kokusai Electric Offers its DC series of silicon epitaxial growth systems, featuring high-quality epitaxial layer growth and excellent cost performance.

Specifications
DC-7000 DC-8600 DC-9500 Susceptor Diameter 740mm 860mm 950mm Batch Size 125mm 20 27 31 150mm 11 20 24 200mm 7 9 10 300mm - 5 6 Power 3440V 260kVA 3440V 380kVA 3440V 380kVA Cooling Wafer 3kgf/cm2 360/min 3kgf/cm2 440/min 3kgf/cm2 440/min Dimensions (W×D×H) 4500×3850×2300 5600×4500×2400 5600×4500×2400
Benefits and features
	High cost performance and high throughput - Bulk processing, efficient gas substitution, rapid temperature ramp up and down High up-time rate and proven safety - Designed for easy maintenance Excellent yield rate - Low particle generation due to ultra-clean design Minimization of metal contamination - Dual reactor design features metal outer bell-jar and quartz inner bell-jar
Typical Process Performance
SiH2Cl2 SiHCl3 SiCl4 SiH4 growth rate (m/min) 0.5-1.0 0.1-2.0 0.1-0.8 0.1-0.3 resistivity (cm) (undoped) > 100 > 100 > 100 > 100 controllable resistivity (cm) (undoped) 0.1-20 0.1-100 0.1-100 0.1-20 thickness thickness 10m 10m 10m 10m within wafer 3% 3% 3% 3% wafer to wafer 3% 3% 3% 3% batch to batch 5% 5% 5% 5% resistivity at 10cm within wafer 3% 3% 3% 3% wafer to wafer 5% 5% 5% 5% batch to batch 7% 7% 7% 7%