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Batch Epi Si/SiGe System

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Hitachi Kokusai's new epitaxial system offers the SiGe community a cost-effective batch solution designed for increasing volume production.
 
Employing the field-proven, load-lock platform, Hitachi Kokusai provides the film and crystal qualities expected in advanced device design while high-throughput with 100 wafer batch size. Our ability to process at low temperatures provides the second critical factor in maintaining a low Cost of Ownership.
Phot(Batch Type Si/SiGe System)
 

Features

 
  • Simple Design (non UHV design)
  • Low Temperature EPI Process (at 450C-550C)
  • Excellent Thickness, Ge Fraction and Rs Uniformity Across Batch
  • High Productivity based on field proven batch platform
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Single Wafer Plasma Nitridation System MARORA

Batch Type Atomic Layer Deposition Process Tool ALDINNA

Vertical Diffusion/LPCVD System QUIXACE(Pronounce quick ace)

Load Lock Vertical Diffusion/LPCVD System QUIXACE-L/L

High Temperature Anneal Processing Tool ZESTONE-III

Batch Epi Si/SiGe System
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Plasma Dry Strip System(λ-300)
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