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Plasma Dry Strip System(λ-300)

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λ-300 is Hitachi Kokusai's new platform for low cost, high throughput solution for 65nm/45nm 300mm wafer photo resist strip processing. The photo resist stripping can be carried out in a dry, eco-friendly environment with unique and proprietary plasma source. Our industry-leading technologies enabled very high throughput with very low total cost of ownership. The unique proprietary plasma chamber design results in no damage to gate oxides, other FEOL process and BEOL. The system exhibits much higher ash rates than all other competing technologies. Besides high throughput and no plasma damage, λ-300 offers incredibly small footprint which saves fab cost and is a distinct advantage over competing solutions.
Phot(High Temperature Anneal Processing Tool ZESTONE-III)
 

Features

 
  • Plasma Damage Free Process & High Ash Rate
  • Wide Variety of Process Applications (Bulk Ash, HDI etc.)
  • High Throughput & Low TCoO
  • Small Footprint
  • Easy Maintenance

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Single Wafer Plasma Nitridation System MARORA

Batch Type Atomic Layer Deposition Process Tool ALDINNA

Vertical Diffusion/LPCVD System QUIXACE(Pronounce quick ace)

Load Lock Vertical Diffusion/LPCVD System QUIXACE-L/L

High Temperature Anneal Processing Tool ZESTONE-III

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Plasma Dry Strip System(λ-300)
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